Experimental characterization of the thermo-optic coefficient vs. temperature for 4H-SiC and GaN semiconductors at the wavelength of 632 nm.

The design of semiconductor-based photonic devices requires precise knowledge of the refractive index of the optical materials, a not constant parameter over the operating temperature range. However, the variation of the refractive index with the temperature, the thermo-optic coefficient, is itself temperature-dependent. A precise characterization of the thermo-optic coefficient in a wide temperature range is therefore essential for the design of nonlinear optical devices, active and passive integrated photonic devices and, more in general, for the semiconductor technology explored at different wavelengths, from the visible domain to the infrared or ultraviolet spectrum. In this paper, after an accurate ellipsometric and micro-Raman spectroscopy characterization, the temperature dependence of the thermo-optic coefficient ([Formula: see text]) for 4H-SiC and GaN in a wide range of temperature between room temperature to T = 500 K in the visible range spectrum, at a wavelength of λ = 632.8 nm, is experimentally evaluated. For this purpose, using the samples as a Fabry-Perot cavity, an interferometric technique is employed. The experimental results, for both semiconductors, show a linear dependence with a high determination coefficient, R2 of 0.9648 and 0.958, for 4H-SiC and GaN, respectively, in the considered temperature range.

Temperature dependence of the thermo-optic coefficient in 4H-SiC and GaN slabs at the wavelength of 1550 nm.

The refractive index and its variation with temperature, i.e. the thermo-optic coefficient, are basic optical parameters for all those semiconductors that are used in the fabrication of linear and non-linear opto-electronic devices and systems. Recently, 4H single-crystal silicon carbide (4H-SiC) and gallium nitride (GaN) have emerged as excellent building materials for high power and high-temperature electronics, and wide parallel applications in photonics can be consequently forecasted in the near future, in particular in the infrared telecommunication band of λ = 1500-1600 nm. In this paper, the thermo-optic coefficient (dn/dT) is experimentally measured in 4H-SiC and GaN substrates, from room temperature to 480 K, at the wavelength of 1550 nm. Specifically, the substrates, forming natural Fabry-Perot etalons, are exploited within a simple hybrid fiber free-space optical interferometric system to take accurate measurements of the transmitted optical power in the said temperature range. It is found that, for both semiconductors, dn/dT is itself remarkably temperature-dependent, in particular quadratically for GaN and almost linearly for 4H-SiC.

Ranging with Frequency Dependent Ultrasound Air Attenuation.

Measuring the distance between two points has multiple uses. Position can be geometrically calculated from multiple measurements of the distance between reference points and moving sensors. Distance measurement can be done by measuring the time of flight of an ultrasonic signal traveling from an emitter to receiving sensors. However, this requires close synchronization between the emitter and the sensors. This synchronization is usually done using a radio or optical channel, which requires additional hardware and power to operate. On the other hand, for many applications of great interest, low-cost, small, and lightweight sensors with very small batteries are required. Here, an innovative technique to measure the distance between emitter and receiver by using ultrasonic signals in air is proposed. In fact, the amount of the signal attenuation in air depends on the frequency content of the signal itself. The attenuation level that the signal undergoes at different frequencies provides information on the distance between emitter and receiver without the need for any synchronization between them. A mathematical relationship here proposed allows for estimating the distance between emitter and receiver starting from the measurement of the frequency dependent attenuation along the traveled path. The level of attenuation in the air is measured online along the operation of the proposed technique. The simulations showed that the range accuracy increases with the decrease of the ultrasonic transducer diameter. In particular, with a diameter of 0.5 mm, an error of less than ± 2.7 cm (average value 1.1 cm) is reached along two plane sections of the typical room of the office considered (4 × 4 × 3 m3).

A Monolithic Multisensor Microchip with Complete On-Chip RF Front-End.

In this paper, a new wireless sensor, designed for a 0.35 µm CMOS technology, is presented. The microchip was designed to be placed on an object for the continuous remote monitoring of its temperature and illumination state. The temperature sensor is based on the temperature dependence of the I-V characteristics of bipolar transistors available in CMOS technology, while the illumination sensor is an integrated p-n junction photodiode. An on-chip 2.5 GHz transmitter, coupled to a mm-sized dipole radiating element fabricated on the same microchip and made in the top metal layer of the same die, sends the collected data wirelessly to a radio receiver using an On-Off Keying (OOK) modulation pattern.

A 2.5 ns switching time MachZehnder modulator in as-deposited a-Si:H.

A very simple and fast Mach-Zehnder electro-optic modulator based on a p-i-n configuration, operating at λ = 1.55 µm, has been fabricated at 170 °C using the low cost technology of hydrogenated amorphous silicon (a-Si:H). In spite of the device simplicity, refractive index modulation was achieved through the free carrier dispersion effect resulting in characteristic rise and fall times of ~2.5 ns. By reverse biasing the p-i-n device, the voltage-length product was estimated to be V(π)∙L(π) = 40 V∙cm both from static and dynamic measurements. Such bandwidth performance in as-deposited a-Si:H demonstrates the potential of this material for the fabrication of fast active photonic devices integrated on standard microelectronic substrates.

Electro-optical modulation at 1550 nm in an as-deposited hydrogenated amorphous silicon p-i-n waveguiding device.

Hydrogenated amorphous silicon (a-Si:H) has been already considered for the objective of passive optical elements, like waveguides and ring resonators, within photonic integrated circuits at λ = 1.55 µm. However the study of its electro-optical properties is still at an early stage, therefore this semiconductor in practice is not considered for light modulation as yet. We demonstrated, for the first time, effective electro-optical modulation in a reverse biased a-Si:H p-i-n waveguiding structure. In particular, phase modulation was studied in a waveguide integrated Fabry-Perot resonator in which the V(π)⋅L(π) product was determined to be 63 V⋅cm. Characteristic switch-on and switch-off times of 14 ns were measured. The device employed a wider gap amorphous silicon carbide (a-SiC:H) film for the lower cladding layer instead of silicon oxide. In this way the highest temperature involved in the fabrication process was 170°C, which ensured the desired technological compatibility with CMOS processes.

Electro-optically induced absorption in alpha-Si:H/alpha-SiCN waveguiding multistacks.

Electro optical absorption in hydrogenated amorphous silicon (proportional-Si:H)--morphous silicon carbonitride (proportional-SiCxNy) multilayers have been studied in two different planar multistacks waveguides. The waveguides were realized by plasma enhanced chemical vapour deposition (PECVD), a technology compatible with the standard microelectronic processes. Light absorption is induced at lambda = 1.55 microm through the application of an electric field which induces free carrier accumulation across the multiple insulator/semiconductor device structure. The experimental performances have been compared to those obtained through calculations using combined two-dimensional (2-D) optical and electrical simulations.

A parametric study of laser induced ablation-oxidation on porous silicon surfaces.

We have investigated the laser induced ablation-oxidation process on porous silicon layers having different porosities and thicknesses by non-destructive optical techniques. In particular, the interaction between a low power blue light laser and the porous silicon surfaces has been characterized by variable angle spectroscopic ellipsometry and Fourier transform infrared spectroscopy. The oxidation profiles etched on the porous samples can be tuned as functions of the layer porosity and laser fluence. Oxide stripes of width less than 2 µm and with thicknesses between 100 nm and 5 µm have been produced, depending on the porosity of the porous silicon, by using a 40 × focusing objective.

Thermo-optic design for microwave and millimeter-wave electromagnetic power microsensors.

Rendina et al. recently proposed the original configuration of an electromagnetic power sensor for microwaves and millimeter waves that is based on an optically interrogated all-silicon chip [Electron. Lett. 35, 1748 (1999)]. Here we theoretically analyze and discuss in detail the performances of such a new class of nonperturbing and wideband probe in terms of sensitivity, resolution, intrinsic detectivity, linearity, and response time. Good agreement between theory and experiments is demonstrated. In particular, minimum resolutions of approximately 1 mW/cm2 are obtained at frequencies beyond 10 GHz. The dependence of response on the geometrical and electromagnetic parameters of the sensing element is analyzed, and on this basis the possibility of achieving optimized configurations is discussed.